Recently, the website of the Ministry of Industry and Information Technology released the first batch of application demonstration guidance catalogue of key new materials (2024 edition) (draft for comments).

According to the draft for comments, there are 52 types of advanced chemical materials, including special rubber and other polymer materials, engineering plastics, membrane materials and other advanced chemical materials. In addition, the catalog also covers 33 kinds of high-performance fibers and composite materials, 45 kinds of advanced semiconductor materials and new display materials, 10 kinds of new energy materials, 16 kinds of biomedical and biodegradable materials, 16 kinds of cutting-edge new materials, a total of 296 kinds of key new materials.

Attached is a list of carbon-related materials and corresponding performance requirements for advanced non-ferrous metals, advanced inorganic non-metallic materials, high-performance fibers and composite materials, advanced semiconductor materials, new display materials, and cutting-edge new materials in the guidance catalog:

Advanced basic materials

Aluminum-based silicon carbide composites

The thermal conductivity at room temperature ≥ 200 W/(m·K), the flexural strength ≥ 500 MPa, and the coefficient of thermal expansion (RT~200°C) ≤9 ppm/°C.

Ceramic matrix composites

(1) Ablation resistance C/SiC composites: density is 2.5~3.2 g/cm³, tensile strength at room temperature ≥ 150 MPa, tensile modulus ≥ 120 GPa, fracture toughness ≥ 10 MPa·m1/2, tensile strength ≥ 100 MPa at 1600 °C, temperature resistance ≥ 1800 °C, and meets 1000 in heat flow environment above 2 MW/m² Zero ablation or micro-ablation requirements;

(2) SiC/SiC composites for nuclear power: density of 2.7~2.9 g/cm³, tensile strength ≥ 250 MPa at room temperature, tensile modulus ≥ 150 GPa, fracture toughness ≥ 10 MPa·m1/2, tensile strength ≥ 200 MPa at 1200°C, thermal conductivity ≥ 20 W/(m· K), coefficient of thermal expansion (25°C~1300°C) 3~5×10^-6/°C;

(3) Aviation SiC/SiC composites: density of 2.5~2.9 g/cm³, tensile strength ≥ 250 MPa at room temperature, tensile modulus ≥ 150 GPa, fracture toughness ≥ 10 MPa·m^1/2, tensile strength at 1300°C≥ 200 MPa, tensile modulus ≥ 100 GPa, fracture toughness ≥ 10 MPa·m^1/2, strength retention rate ≥ 80% (500 hours of oxygen ambient heat treatment at 1300°C, 120 MPa stress).

High thermal conductivity artificial graphite film

The horizontal thermal conductivity ≥ 1500 W/(m·K), and the film thickness is 12 μm~500 μm.

High-performance aerospace graphite sealing materials and products

Compressive strength ≥ 140 MPa, flexural strength ≥ 60 MPa, shore hardness 75~95 Hs, graphitization degree ≥ 85%, friction coefficient ≤ 0.15, opening porosity ≤2%, thermal weight loss ≤5% (650 °C, 50 h), particle size ≤ 10 μm, thermal conductivity ≥ 60 W/(m·K) (400 °C), Poisson's ratio 0.23~0.25, coefficient of thermal expansion ≤ 5×10^-6/°C, bulk density ≥ 1.95 g/cm³.

Super-large annular fine-structured graphite for polysilicon

Finished product size: Φ 1360/890 mm×1100 mm; bulk density ≥ 1.75 g/cm³; Flexural strength≥ 35 MPa; CTE≤5.3×10^-6/K。

Superhard material products for cutting tools

(1) PCD: hardness≥HV4000, camber≤0.1 mm, thickness tolerance≤±0.1 mm;

(2) Polycrystalline PCBN blade: hardness ≥ 3200 HV, impact toughness ≥ 25 J, flexural strength ≥ 500 MPa.

Superhard material products for ultra-precision machining

(1) Thinning grinding wheel: hardness deviation ≤8%; Dynamic balancing accuracy≤0.2 g; Wafer processing accuracy: TTV≤3 μm;

(2) Chamfer wheel: the distance tolerance from multiple grooves to the datum plane is ≤ 0.05 mm, and the angle of the groove opening is ≤1°; The arc ≤ at the bottom of the groove is 0.02 mm; Workpiece chipping ≤ 30 μm;

(3) Slurry/polishing slurry: polishing efficiency≥ 0.8 μm/h; Surface roughness≤0.2 nm;

(4) Ceramic suction cup/carrier plate: parallelism≤50 μm, flatness≤50 μm;

(5) Ultra-thin cutting grinding wheel for semiconductor packaging: outer diameter D(25~125)±0.05 mm, thickness T(0.048~2.0)±0.008 mm, inner hole (6~40 mm) H7, flatness ≤ 0.07 mm, concentricity ≤ 0.01 mm, parallelism ≤ 0.01 mm.

Ultra-fine diamond wire saw

(1) Carbon steel wire wire saw: the diameter of the carbon steel wire wire saw is less than 48 microns, the wire breakage rate is ≤8%, the outer diameter error is ≤5 μm, the tensile strength is ≥ 5200 MPa, and the free circle warp ≥ is 50 mm;

(2) Tungsten wire saw: the diameter of tungsten wire saw is less than 45 microns, the wire breakage rate is ≤8%, the tensile strength is ≥ 6000 Mpa, the outer diameter error is ≤5 μm, and the free circle warp is ≥ 50 mm.

Key strategic materials

High-performance carbon fiber

(1) High-strength type: tensile strength ≥ 4500 MPa, CV≤5%, tensile modulus 230~250 GPa, CV≤2%;

(2) High-strength medium model: tensile strength ≥ 5500 MPa, CV≤5%, tensile modulus 285~305 GPa, CV≤2%;

(3) High model: tensile strength ≥ 4200MPa, CV≤5%, tensile modulus 400GPa, CV≤2%.

Carbon fiber warp knitted fabric for ships

Fiber: T700-12K, vinyl sizing agent; Warp knitted fabrics: single, double and triaxial carbon fiber fabrics, areal density range 200~900 g/m², tolerance ±5%; Mechanical properties of reinforced vinyl resin composites: uniaxial interlaminar shear strength ≥ 50 Mpa, biaxial interlaminar shear strength ≥ 35 Mpa.

Carbon fiber composites for aviation interiors

0° tensile strength > 1700 MPa, 0° tensile modulus > 100 GPa, flexural strength > 1200 MPa, density ≤ 1.6 g/cm³, flame retardant: heat release according to CCAR25.853 ≤ 65 kW/m², Smoke density≤ 2004 dm.

Carbon fiber/epoxy composite

The interlaminar shear strength > 70 MPa, the flexural strength > 1200 MPa, and the tensile strength > 1800 MPa.

Carbon fiber composite material for hydrogen storage cylinders

(1) Fuel cell hydrogen cylinder for vehicles and ships: working pressure ≥ 35 MPa, service life 10~15 years, mass hydrogen storage density 4.0%;

(2) Fuel cell hydrogen cylinder for UAV: working pressure 35 MPa, service life of 5 years, mass hydrogen storage density of 7.0%.

Large tow carbon fiber and its thermoplastic composites

Localized ≥ 48K large tow carbon fiber. The linear density ≥ 3300 g/km, the tensile strength ≥ 4000 MPa, and the CV≤8%. The tensile modulus ≥ 235 GPa, and the CV ≤4%.

Mesophase asphalt-based carbon fiber

(1) High carbon series: tensile strength ≥ 1400 MPa, elastic modulus 200±20 GPa, elongation at break ≥0.3%, thermal conductivity after graphitization 200~1000 W/(m·K);

(2) High modulus series: tensile strength ≥ 2000 MPa, elastic modulus ≥ 600 GPa, thermal conductivity 200~500 W/(m·K);

(3) High thermal conductivity series: tensile strength ≥ 2200 MPa, elastic modulus ≥ 700 GPa, thermal conductivity 500~1000 W/(m·K).

High weathering fiberglass/carbon fiber composites

The highest tensile strength ≥ 600 kN/m, elongation ≤3%, temperature resistance -100~280°C.

Continuous silicon carbide fibers

(1) Doped second-generation continuous silicon carbide fiber: single fiber diameter 8~10 μm, density 2.4~2.6 g/cm³, monofilament tensile strength ≥ 2.8 GPa, bundle tensile strength ≥ 2.5 GPa, tensile elastic modulus ≥ 200 GPa, elongation at break ≥1%, oxidation ≤10%, metal doped element content ≤1%, monofilament tensile strength ≥ 2.5 GPa (1250°C argon for 1 h), monofilament tensile strength ≥ 2.3 GPa (1000°C air for 1 h);

(2) Doped third-generation continuous silicon carbide fiber: the diameter of the single fiber is 8±1.0 μm, and the density is 3.10±0.15 g/cm³. The tensile strength of monofilament ≥ 2.8 GPa, the tensile strength of bundle wire ≥ 2.6 GPa, the tensile elastic modulus ≥ 360 GPa, the elongation at break ≥0.8%, the SiC grain size ≥30 nm, the carbon-silicon atom ratio is 1.05~1.2, the oxygen content ≤ 0.8%, the doped element ≤3 wt.%, the temperature resistance (argon at 1500 °C for 1 h, the strength retention rate ≥80%), the oxidation resistance (1250 °C air for 1 h, the strength retention rate ≥ 80%);

(3) Absorbing continuous silicon carbide fiber: tensile strength ≥ 2.3 GPa, Young's modulus ≥ 200 GPa, resistivity 10⁵~10^-2 Ω·cm adjustable.

Carbon/carbon composites for aviation brakes

Density≥ 1.85 g/cm³; Compressive strength≥ 150 MPa; Flexural strength≥ 120 MPa; Interlaminar shear strength≥ 12 MPa; Graphitization ≥35%; Oxidative weight loss rate≤5%; High-energy brakes (energy flow density≥ 3000 kW/m², area energy load≥ 60 MJ/m²); The coefficient of friction ≥ 0.25.

High-performance carbon fiber reinforced ceramic-based friction material

density≤ 2.2 g/cm³; Operating temperature: -50~1650°C; Compressive strength≥ 160 MP; Flexural strength≥ 120 MP; The friction coefficient is 0.25~0.45, the peak ratio of friction moment is ≤2, and the thermal decay of friction coefficient is ≤15%; The frictional moment decays by ≤5% in wet state.

Silicon carbide single crystal substrate and homogeneous epitaxial wafer

(1) Silicon carbide single crystal substrate: 6 inches and above, microtubule density≤0.2/cm², TTV<10 μm, -15 μm<bow²； The resistivity of semi-insulating silicon carbide substrate ≥ 10¹⁰ Ω·cm.

(2) Silicon carbide homogeneous epitaxial wafer: greater than 6 inches, non-uniformity of concentration in epitaxial wafer: ≤10%; Thickness inhomogeneity in epitaxial wafer: ≤5%; Epitaxial surface defect density: ≤1 cm^-2; Epitaxial surface roughness: ≤0.3 nm.

Precision ceramic components for semiconductor equipment

(1) Silicon carbide electrode for etching equipment: elastic modulus ≥ 350 GPa, bending strength ≥ 350 MPa, purity > 6 N, thermal conductivity ≥ 180 W/(m·K), thermal expansion coefficient ≤ 4.5×10^-6 ℃^-1, density ≥ 3.2 g/cm³ , hardness>29 GPa, resistivity 0.005~80 Ω·cm;

(2) Silicon carbide ring for etching equipment: elastic modulus ≥ 350 GPa, flexural strength ≥ 350 MPa, purity >6 N, thermal conductivity ≥ 180 W/(m·K), thermal expansion coefficient ≤ 4.5×10^-6 ℃^-1, density ≥ 3.2 g/cm³ , hardness>29 GPa;

(3) Silicon nitride ceramic parts for etching equipment: density≥ 3.15 g/cm³; Thermal conductivity (RT)≥27 W/(m·K); Thermal expansion ≤ 3.5×10^-6/K; Flexural strength≥ 550 MPa; The average particle size ≤ 4 μm; Weber's modulus ≥9; Critical dimensional accuracy± 0.02 mm; The surface is 0.3~5 μm, the size particles ≤ 5000 count/cm², and the surface organic matter ≤ 0.1 μg/cm²;

(4) Sintered silicon carbide boat for high-temperature diffusion process of 6 inches and above: density ≥ 3.1 g/cm³, thermal conductivity ≥ 160 W/(m·K), purity ≥ 99.9%, flexural strength ≥ 370 MPa;

(5) CVD silicon carbide boat for high-temperature diffusion process of 6 inches and above: elastic modulus ≥ 350 GPa, bending strength ≥ 350 MPa, purity > 6 N, thermal conductivity ≥ 180 W/(m·K), thermal expansion coefficient ≤ 4.5×10^-6 ℃^-1, density ≥ 3.2 g/cm³. Hardness>29 GPa;

(6) Sintered silicon carbide furnace tube for high-temperature diffusion process of 6 inches and above: purity ≥ 99.96%, density ≥ 2.9 g/cm³, compressive strength ≥ 350 MPa; The coefficient of thermal expansion ≤ 4.5×10^-6 ℃^-1;

(7) CVD silicon carbide furnace tube for high-temperature diffusion process of 6 inches and above: elastic modulus ≥ 350 GPa, bending strength ≥ 350 MPa, purity >6 N, thermal conductivity ≥ 180 W/(m·K), thermal expansion coefficient ≤ 4.5×10^-6 ℃^-1, density ≥ 3.2 g/cm ³. Hardness> 29 GPa.

8-12 inch silicon monocrystalline polished wafers and epitaxial wafers

(1) 8-inch light-doped silicon single crystal polishing wafer: crystal direction (100), P-type, boron doped, resistivity 1~200 ohm·cm, oxygen content 6~15 ppma, less than 80 particles ≥ 90 nm; Size requirements: outer diameter 200 mm±0.2 mm, thickness 600~750 μm, allowable deviation ± 15 μm, total thickness change ≤4 μm; Total flatness≤3 μm; Local flatness (SBIR25×25) ≤ 0.8 μm; Curvature≤40 μm; Warpage≤40 μm;

(2) 8-inch heavy-doped silicon single crystal polished wafer: crystal direction (100)/(111), P-type/N-type, boron/phosphorus/arsenic/antimony doped, resistivity 0.0007~0.08O hm·cm, oxygen content 8~18 ppma, less than 200 particles ≥ 120 nm; Size requirements: outer diameter 200 mm±0.2 mm, thickness 600~750 μm, allowable thickness deviation ± 15 μm, total thickness change ≤ 5 μm; Total flatness≤4 μm; Local flatness (SBIR25×25) ≤ 1.2 μm; Bending≤60 μm; Warpage≤60 μm;

(3) 12-inch silicon single crystal polished wafer: outer diameter 300 mm±0.2 mm, allowable thickness deviation ± 25 μm, total thickness change ≤ 3 μm, warpage ≤ 50 μm, local flatness (SFQR25×25) ≤ 0.1 μm.

(4) 12-inch silicon single crystal epitaxial wafer: product type N/N, doped with element phosphorus; Epitaxial resistivity>80O hm·cm; resistivity gradient ≤7%; The thickness of the epitaxial layer > 80 μm; Thickness deviation≤ 3.5%; BOW≤45 μm； Warp≤60 μm。

Ultra-high-purity graphite for semiconductors

Ash≤ 5 ppm; B, Al, Fe content≤ 0.01 ppm; Resistivity (μΩ·m): 11~15.

Cutting-edge new materials

Graphene heat dissipation material

(1) Graphene heat dissipation material: xy-axis thermal conductivity ≥ 1950 W/(m·K), z-axis thermal conductivity ≥ 22 W/(m·K), radiation coefficient ≥ 92%, film thickness 25~500 μm;

(2) Graphene heat dissipation coating: adhesion grade 0, thermal emissivity ≥ 95%, planar thermal conductivity ≥ 100 W/(m·K), neutral salt spray resistance ≥ 5000 h, temperature resistance ≥ 200 °C, hardness ≥2 h.

Preparation of graphene electric heating film by coating method

Preparation of graphene electric heating film by coating method: PET, mica or PI package, working voltage 110~220 V, power density 160~260 W/m², surface working temperature 45~100 °C, service life ≥ 30000 hours, electrothermal conversion efficiency ≥ 98%, electrothermal radiation conversion efficiency ≥70%, can effectively emit 4~14 μm wavelength infrared rays, temperature inhomogeneity <10%.

Graphene thermally conductive composites

(1) Graphene high thermal conductivity composite materials for lighting/communication: thermal conductivity > 20 W/(m·K), tensile strength > 29 MPa, bending strength > 45 MPa, cantilever beam unnotched impact strength > 3.0 Kj/m², flame retardant reaching V0 level, density <1.6 g/cm³, Thermal emissivity ≥0.8, weather resistance, corrosion resistance, etc.

(2) Graphene high thermal conductivity composite pipe: density < 200°C, burst pressure > 5 MPa, long-term use pressure > 1 MPa, thermal emissivity > 0.8, acid and alkali resistance and other corrosive media.

Graphene modified foaming material

The density ≤ 0.25 g/cm³, the hardness ≥ 42 degrees, the tensile property ≥ 0.6 MPa, the tear property ≥ 1.65 MPa, and the long-term heat aging test is 700°C for 150 h.

Graphene modified lubricating material

(1) Graphene gear oil: SH/T0189 method, conditions 1800 r/min, 196 nN, 60 min, 54 °C test, the diameter of the grinding spot ≤ 0.32 mm; PD≥3000 N； FZG bench test not less than grade 11;

(2) Graphene anti-wear hydraulic oil: FZG bench test not less than grade 9; The coefficient of friction < 0.11, and the oxidation stability ≥ 3000 h.

Graphene explosion-proof electric heat tracing film material

Rated power 10~120 W/m; Temperature resistance≥ 200°C; The maximum maintenance temperature of the medium is 150°C; Dimensions: thickness 0.6~5.0 mm; Width: 80~500 mm; The maximum length of a single power supply is 6~300 m; Insulation resistance ≤ 50 MQ.

Carbon nanotubes

(1) Single-walled carbon nanotube conductive paste: the solid content of the slurry ≥0.8%, and the volume resistivity of the slurry: ≤12 mΩ·cm; The viscosity of slurry≤ 6000 mPa·s;

(2) High-performance dispersant for carbon nanotubes: moisture ≤0.2%, Al≤10 mg/kg, Ca≤20 mg/kg, Co≤10 mg/kg, Cu≤20 mg/kg, Cr≤10 mg/kg, Mg≤10 mg/kg, Mn≤10 mg/kg, Na≤40 mg/kg, Ni≤10 mg/kg, Zn≤20 mg/kg, Fe≤50 mg/kg; APEO-free, VOC≤2%, and the addition amount is less than 30%.