Achievements | Morion Nanotech has made important progress in the field of graphene semiconductor band control
From:morionDate:2022-05-24 Views:1783

      Morion Nanotech has always been committed to building a graphene industry integration and development platform that combines scientific research and manufacturing with dual genes. In 2020, Morion Nanotech established an academic committee, and the R&D team was successfully selected as the fifth batch of innovative scientific research teams introduced by Dongguan City, allowing Morion Nanotech to maintain its leading position in key scientific research fields such as graphene preparation and characterization, thermal management applications, and energy and devices.

      Recently, the R&D team of Morion Nanotech has made important progress in the microstructure characterization and band structure regulation mechanism of graphene nanoribbon semiconductors, and the research results were published online in the international top chemical journal "Angewandte" with the title of "On-Surface Synthesis of Nitrogen-Doped Graphene Nanoribbon with Multiple Substitutional Sites". Chemie International Edition (Top Journal of the Chinese Academy of Sciences, IF = 15.33). Dr. Cai Jinming, the leader of the innovation team, and Dr. Chen Long, the core member, are the co-corresponding authors of the paper, Dr. Lu Jianchen, the core member, is the co-first author of the paper, and Dr. Hao Zhenliang, the R&D director of Morion Nanotech, is the co-author of the paper.


Synthesis and band manipulation of atomic-scale graphene nanosemiconductors

      In this paper, graphene nanoribbons (GNRs) with multi-site nitrogen doped (pyridine nitrogen and graphitic nitrogen) were successfully synthesized on the surface of Au (111) by using precisely designed nitrogen-doped precursor molecules and precisely adjusting the experimental parameters. STM and NC-AFM techniques were used to characterize different nitrogen atom doping sites. The electrical properties study confirmed that pyridine nitrogen slightly expands the GNR band gap compared with intrinsic GNRs, while graphite nitrogen introduces two metalloid-like defect states near the Fermi level. The results of first-principles calculations show that the pyridine nitrogen atom acts on the outside of the GNR, which is equivalent to the hydrogenation atom of carbon atom, so it has little influence on the band structure of the GNR. The graphite nitrogen atom acts inside the GNR, and since it has one more electron than the replaced carbon atom, it has an essential effect on the band structure of the GNR (metallicity). Through the combination of experiment and theory, this work reveals the essence of the role of different nitrogen doping sites on the band structure regulation of GNRs, and provides a new material for the fabrication of graphene semiconductor devices.

      In the field of graphene electronic devices, Morion Nanotech has been working hard for a long time and has cooperated with many scientific research institutes, from the precise construction of graphene semiconductor materials, to the regulation of graphene band characteristics, to stable mass production. At present, graphene semiconductor materials have been used by many semiconductor companies in the predicted micro-nano chips, which has laid a good start for the wide application of graphene in semiconductor electronic devices.

     The Morion Nanotech team is good at carrying out customized technology research and development for specific enterprises, achieving a win-win situation through technology output and innovation cooperation, and realizing the rapid advancement from basic research to industrialization, and has become the first enterprise with graphene mechanism research, raw material preparation, innovative product development, and material intelligent manufacturing.


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